MD7P19130HSR5 vs MD7P19130HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MD7P19130HSR5 sa pamamagitan ng NXP Semiconductors at MD7P19130HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP
MD7P19130HSR5 ✓ NakahandaNXP Semiconductors
MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP
MD7P19130HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MD7P19130HSR5 | MD7P19130HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MD7P19130HSR5 | — |
| Uri ng Transistor | LDMOS (Dual), N-Channel | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Technology | RF Power LDMOS | NXP HV7 LDMOS |
| Drain-Source Voltage (VDS) | 28 V (typical operating), 65 V (rated) | — |
| Drain Current (Continuous) | 1.25 A | — |
| Output Power (Pout) | 40 W (minimum, CW) | 40 W average (W-CDMA, single-carrier) |
| Power Gain (Gp) | 20 dB (typical at 1.99 GHz) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Frequency Band | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 | — |
| Packhaging / Kaso | NI-780HS-4L (NI780HS-4 ceramic, flange mount) | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| Uri ng Pagpapasok | Chassis / Flange Mount (through-hole flange) | Chassis-mount (bolt-down) with ceramic lid |
| Weight | 6.47 g | — |
| Tindminan RoHS | Compliant | Compliant |
| Test Conditions | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW | — |
| Drain-Source Voltage (VDS) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Power Gain | — | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | — | 30% typical at 40 W, 1987.5 MHz |
| Quiescent Drain Current (IDQ) | — | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | — | -36 dBc typical |
| Input Signal PAR | — | 7.5 dB @ 0.01% probability on CCDF |
| Device Output Signal PAR | — | 6 dB @ 0.01% probability on CCDF |
| Operating Mode | — | Single-carrier W-CDMA, Class AB |