MD7P19130HSR5 vs MD7P19130HSR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MD7P19130HSR5 tarafından NXP Semiconductors ve MD7P19130HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MD7P19130HSR5 MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP

MD7P19130HSR5 ✓ Aktif
NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MD7P19130HSR5 MD7P19130HSR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MD7P19130HSR5 —
Transistor Türü LDMOS (Dual), N-Channel LDMOS (Dual), Lateral N-Channel RF Power MOSFET
Technology RF Power LDMOS NXP HV7 LDMOS
Drain-Source Voltage (VDS) 28 V (typical operating), 65 V (rated) —
Drain Current (Continuous) 1.25 A —
Output Power (Pout) 40 W (minimum, CW) 40 W average (W-CDMA, single-carrier)
Power Gain (Gp) 20 dB (typical at 1.99 GHz) —
Operating Frequency 1.93 GHz to 1.99 GHz —
Frequency Band DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 —
Paket / Kas NI-780HS-4L (NI780HS-4 ceramic, flange mount) NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged
Montaj Türü Chassis / Flange Mount (through-hole flange) Chassis-mount (bolt-down) with ceramic lid
Weight 6.47 g —
RoHS Durumu Compliant Compliant
Test Conditions VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW —
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V (typical)
Frequency Range — 1930 MHz to 1990 MHz
Power Gain — 20 dB typical at 1987.5 MHz
Drain Efficiency — 30% typical at 40 W, 1987.5 MHz
Quiescent Drain Current (IDQ) — 1250 mA
ACPR (5 MHz offset, 3.84 MHz channel) — -36 dBc typical
Input Signal PAR — 7.5 dB @ 0.01% probability on CCDF
Device Output Signal PAR — 6 dB @ 0.01% probability on CCDF
Operating Mode — Single-carrier W-CDMA, Class AB

Dökümanlar & Kaynaklar

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