AS4C256M8D3LB-12BIN - 2Gbit DDR3L SDRAM 78-FBGA | Alliance Memory
MPN: AS4C256M8D3LB-12BIN ✓ نشطAS4C256M8D3LB-12BIN نظرة عامة
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) than standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory in laptops, embedded systems, and networking equipment. DDR3L is backward compatible with DDR3 slots in many cases, making it a popular choice for upgrades and new designs.
Key features include a parallel interface with a data rate of 1600 MT/s, a burst length of 8, and on-die termination (ODT) for improved signal integrity. The device supports auto-refresh and self-refresh modes, with a typical refresh period of 7.8 us at 85°C. It also features programmable CAS latency, additive latency, and write latency, allowing flexibility in system timing. The 78-FBGA package is optimized for space-constrained designs, with a compact footprint of 8x10.5 mm.
Technically, the AS4C256M8D3LB-12BIN uses a 2Gbit DRAM cell array with a 8n-prefetch architecture, enabling high-speed data transfer. The device includes a DLL (Delay-Locked Loop) for precise clock alignment and supports dynamic ODT for improved signal quality. It is fabricated using a advanced CMOS process, ensuring low leakage and high reliability. The operating temperature range is 0°C to +95°C (case temperature), making it suitable for commercial and industrial applications.
Typical applications include embedded systems, networking equipment (routers, switches), industrial computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high density make it ideal for battery-powered devices and energy-efficient designs. The device is also used in automotive infotainment systems where reliability and temperature range are critical.
When designing with this memory, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The VREFCA and VREFDQ pins should be bypassed with 0.1uF capacitors. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed signals. The device supports a 1.35V supply, so ensure the power supply is stable and within the specified range.
بدائل مباشرة لـ AS4C256M8D3LB-12BIN — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع AS4C256M8D3LB-12BIN (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Supply Voltage, Burst Length, CAS Latency, Memory Size.
AS4C256M8D3LB-12BCN
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
AS4C256M8D3LB-12BINTR
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
AS4C256M8D3LB-12BCNTR
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M8DA-125
✅ بديل مباشر✗ غير متوفر
$2.85 / وحدة
عرض ورقة البيانات ←IS43TR16256AL-125KBL
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16DP-DI
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←AS4C256M8D3LB-12BIN الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | SDRAM - DDR3L |
| حجم الذاكرة | 2Gbit (256M x 8) |
| الواجهة | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| جهد التغذية | 1.283V ~ 1.45V |
| العلبة / الحالة | 78-FBGA (8x10.5) |
| نوع التركيب | Surface Mount |
| درجة حرارة التشغيل | 0°C ~ +95°C (Tc) |
| معدل البيانات | 1600 MT/s |
| زمن الوصول CAS | 11 |
| Burst Length | 8 |
| Refresh | 7.8 us at 85°C |
| حالة RoHS | Compliant |
| Lead Free | Yes |
تكوين أطراف AS4C256M8D3LB-12BIN
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — DQ power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس A13 | VDD — Power supply |
| دبوس B1 | VSS — Ground |
| دبوس B2 | VDDQ — DQ power supply |
| دبوس B3 | VSS — Ground |
| دبوس B4 | VDDQ — DQ power supply |
| دبوس B5 | VSS — Ground |
| دبوس B6 | VDDQ — DQ power supply |
| دبوس B7 | VSS — Ground |
| دبوس B8 | VDDQ — DQ power supply |
| دبوس B9 | VSS — Ground |
| دبوس B10 | VDDQ — DQ power supply |
| دبوس B11 | VSS — Ground |
| دبوس B12 | VDDQ — DQ power supply |
| دبوس B13 | VSS — Ground |
| دبوس C1 | A0 — Address input 0 |
| دبوس C2 | A1 — Address input 1 |
| دبوس C3 | A2 — Address input 2 |
| دبوس C4 | A3 — Address input 3 |
| دبوس C5 | A4 — Address input 4 |
| دبوس C6 | A5 — Address input 5 |
| دبوس C7 | A6 — Address input 6 |
| دبوس C8 | A7 — Address input 7 |
| دبوس C9 | A8 — Address input 8 |
| دبوس C10 | A9 — Address input 9 |
| دبوس C11 | A10/AP — Address input 10 / Auto-precharge |
| دبوس C12 | A11 — Address input 11 |
| دبوس C13 | A12 — Address input 12 |
| دبوس D1 | BA0 — Bank address 0 |
| دبوس D2 | BA1 — Bank address 1 |
| دبوس D3 | BA2 — Bank address 2 |
| دبوس D4 | RAS# — Row address strobe |
| دبوس D5 | CAS# — Column address strobe |
| دبوس D6 | WE# — Write enable |
| دبوس D7 | CS# — Chip select |
| دبوس D8 | ODT — On-die termination |
| دبوس D9 | CKE — Clock enable |
| دبوس D10 | CK — Clock (positive) |
| دبوس D11 | CK# — Clock (negative) |
| دبوس D12 | RESET# — Reset |
| دبوس D13 | VREFCA — Reference voltage for command/address |
| دبوس E1 | VDD — Power supply |
| دبوس E2 | VSS — Ground |
| دبوس E3 | VDD — Power supply |
| دبوس E4 | VSS — Ground |
| دبوس E5 | VDD — Power supply |
| دبوس E6 | VSS — Ground |
| دبوس E7 | VDD — Power supply |
| دبوس E8 | VSS — Ground |
| دبوس E9 | VDD — Power supply |
| دبوس E10 | VSS — Ground |
| دبوس E11 | VDD — Power supply |
| دبوس E12 | VSS — Ground |
| دبوس E13 | VDD — Power supply |
| دبوس F1 | VSS — Ground |
| دبوس F2 | VDD — Power supply |
| دبوس F3 | VSS — Ground |
| دبوس F4 | VDD — Power supply |
| دبوس F5 | VSS — Ground |
| دبوس F6 | VDD — Power supply |
| دبوس F7 | VSS — Ground |
| دبوس F8 | VDD — Power supply |
| دبوس F9 | VSS — Ground |
| دبوس F10 | VDD — Power supply |
| دبوس F11 | VSS — Ground |
| دبوس F12 | VDD — Power supply |
| دبوس F13 | VSS — Ground |
| دبوس G1 | VDDQ — DQ power supply |
| دبوس G2 | VSS — Ground |
| دبوس G3 | VDDQ — DQ power supply |
| دبوس G4 | VSS — Ground |
| دبوس G5 | VDDQ — DQ power supply |
| دبوس G6 | VSS — Ground |
| دبوس G7 | VDDQ — DQ power supply |
| دبوس G8 | VSS — Ground |
| دبوس G9 | VDDQ — DQ power supply |
| دبوس G10 | VSS — Ground |
| دبوس G11 | VDDQ — DQ power supply |
| دبوس G12 | VSS — Ground |
| دبوس G13 | VDDQ — DQ power supply |
| دبوس H1 | VSS — Ground |
| دبوس H2 | VDDQ — DQ power supply |
| دبوس H3 | VSS — Ground |
| دبوس H4 | VDDQ — DQ power supply |
| دبوس H5 | VSS — Ground |
| دبوس H6 | VDDQ — DQ power supply |
| دبوس H7 | VSS — Ground |
| دبوس H8 | VDDQ — DQ power supply |
| دبوس H9 | VSS — Ground |
| دبوس H10 | VDDQ — DQ power supply |
| دبوس H11 | VSS — Ground |
| دبوس H12 | VDDQ — DQ power supply |
| دبوس H13 | VSS — Ground |
التطبيقات النموذجية
AS4C256M8D3LB-12BIN مناسب لـ 6 التطبيقs: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, IoT Gateways.
Embedded Systems
The AS4C256M8D3LB-12BIN is ideal for embedded systems requiring low-power, high-density memory. Its 2Gbit capacity and x8 organization provide ample storage for operating systems and applications. The 1.35V operation reduces power consumption, extending battery life in portable devices. The 78-FBGA package saves PCB space, enabling compact designs. With a data rate of 1600 MT/s, it supports fast data processing for real-time applications. The device's wide operating temperature range (0°C to +95°C) ensures reliability in industrial environments.
موصى به
Networking Equipment
In networking equipment such as routers and switches, the AS4C256M8D3LB-12BIN provides high-bandwidth memory for packet buffering and routing tables. Its 1600 MT/s data rate ensures fast data throughput, while the low 1.35V supply reduces power dissipation in dense line cards. The x8 organization allows flexible memory expansion. The device's on-die termination improves signal integrity on high-speed buses, critical for reliable operation in noisy environments. The 78-FBGA package is suitable for compact network modules.
موصى به
Industrial Computing
The AS4C256M8D3LB-12BIN is well-suited for industrial computing applications such as PLCs, HMI panels, and edge servers. Its wide temperature range (0°C to +95°C) ensures operation in harsh environments. The low voltage (1.35V) reduces heat generation, improving system reliability. The 2Gbit density provides sufficient memory for complex control algorithms and data logging. The device's high reliability and long lifecycle make it a preferred choice for industrial designs. The 78-FBGA package is robust and suitable for vibration-prone environments.
موصى به
Consumer Electronics
For consumer electronics like smart TVs, set-top boxes, and gaming consoles, the AS4C256M8D3LB-12BIN offers a cost-effective memory solution. Its 2Gbit capacity supports high-definition video streaming and multitasking. The low power consumption is ideal for energy-efficient devices. The 1600 MT/s data rate ensures smooth performance for multimedia applications. The compact 78-FBGA package allows slim device designs. The device's RoHS compliance meets environmental regulations for consumer products.
موصى به
Automotive Infotainment
The AS4C256M8D3LB-12BIN is suitable for automotive infotainment systems, providing reliable memory for navigation, audio, and display applications. Its wide temperature range and low power consumption are critical for automotive environments. The 2Gbit density supports complex user interfaces and map data. The device's high-speed interface (1600 MT/s) enables fast data access for real-time navigation. The 78-FBGA package is compact, fitting into space-constrained head units. The device's long lifecycle ensures availability for automotive production.
موصى به
IoT Gateways
In IoT gateways, the AS4C256M8D3LB-12BIN provides memory for data aggregation and protocol processing. Its low power consumption is essential for always-on devices. The 2Gbit capacity allows buffering of sensor data and firmware updates. The 1600 MT/s data rate supports high-throughput communication. The device's small footprint is ideal for compact gateway designs. The wide temperature range ensures operation in outdoor or industrial settings. The device's reliability is crucial for unattended operation.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ AS4C256M8D3LB-12BIN — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | AS4C256M8D3LB-12BCN | AS4C256M8D3LB-12BINTR | AS4C256M8D3LB-12BCNTR | MT41K256M8DA-125 |
|---|---|---|---|---|---|
| Package | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) |
| Brand | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Micron Technology |
| Memory Size | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) |
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
أبرز الفروقات
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (مقابلMT41K256M8DA-125)
- Wide operating temperature range (0°C to +95°C) suitable for industrial applications (مقابلAS4C256M8D3LB-12BCN)
- Drop-in replacement for Micron MT41K256M8DA-125 with verified compatibility (مقابلMT41K256M8DA-125)
ملاحظات التصميم
The AS4C256M8D3LB-12BIN operates from a 1.35V supply (1.283V to 1.45V). Ensure the power supply is stable and well-regulated. Use a low-impedance power plane and place 0.1uF decoupling capacitors close to each VDD and VDDQ pin. Additionally, a 10uF bulk capacitor should be placed near the device to handle transient currents. Proper decoupling is critical to maintain signal integrity and prevent data corruption.
Follow JEDEC DDR3L layout guidelines for high-speed signals. Keep the trace lengths for DQ, DQS, and address/command signals matched to minimize skew. Use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) for the data and clock lines. Place the device close to the controller to reduce trace lengths. Ensure a solid ground plane beneath the device to provide a low-inductance return path.
The AS4C256M8D3LB-12BIN has a maximum operating temperature of +95°C (case). In high-ambient-temperature environments, ensure adequate airflow or heatsinking. The 78-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate the power dissipation (VDD * IDD) and verify the junction temperature stays within limits. For typical operation at 1.35V and 200mA, power is 0.27W, which is manageable with standard PCB cooling.
معلومات الامتثال
RoHS compliant per distributor data. Lead-free. No AEC-Q100 qualification for this memory device.
