AS4C256M8D3LB-12BIN - 2Gbit DDR3L SDRAM 78-FBGA | Alliance Memory
MPN: AS4C256M8D3LB-12BIN ✓ Hoạt độngAS4C256M8D3LB-12BIN Tóm tắt
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) than standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory in laptops, embedded systems, and networking equipment. DDR3L is backward compatible with DDR3 slots in many cases, making it a popular choice for upgrades and new designs.
Key features include a parallel interface with a data rate of 1600 MT/s, a burst length of 8, and on-die termination (ODT) for improved signal integrity. The device supports auto-refresh and self-refresh modes, with a typical refresh period of 7.8 us at 85°C. It also features programmable CAS latency, additive latency, and write latency, allowing flexibility in system timing. The 78-FBGA package is optimized for space-constrained designs, with a compact footprint of 8x10.5 mm.
Technically, the AS4C256M8D3LB-12BIN uses a 2Gbit DRAM cell array with a 8n-prefetch architecture, enabling high-speed data transfer. The device includes a DLL (Delay-Locked Loop) for precise clock alignment and supports dynamic ODT for improved signal quality. It is fabricated using a advanced CMOS process, ensuring low leakage and high reliability. The operating temperature range is 0°C to +95°C (case temperature), making it suitable for commercial and industrial applications.
Typical applications include embedded systems, networking equipment (routers, switches), industrial computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high density make it ideal for battery-powered devices and energy-efficient designs. The device is also used in automotive infotainment systems where reliability and temperature range are critical.
When designing with this memory, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The VREFCA and VREFDQ pins should be bypassed with 0.1uF capacitors. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed signals. The device supports a 1.35V supply, so ensure the power supply is stable and within the specified range.
Bộ thay thế dễ dàng lắp đặt cho AS4C256M8D3LB-12BIN — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với AS4C256M8D3LB-12BIN (cùng hình factor và footprint) — khác nhau ở Data Rate, Supply Voltage, Burst Length, CAS Latency, Memory Size.
AS4C256M8D3LB-12BCN
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AS4C256M8D3LB-12BINTR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
AS4C256M8D3LB-12BCNTR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT41K256M8DA-125
✅ Drop-In✗ Hết hàng
$2.85 / Đơn vị
Xem tài liệu →IS43TR16256AL-125KBL
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →NT5CC256M16DP-DI
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →AS4C256M8D3LB-12BIN Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | SDRAM - DDR3L |
| Kích thước bộ nhớ | 2Gbit (256M x 8) |
| Giao diện | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| Điện áp cung cấp | 1.283V ~ 1.45V |
| Hộp / Vỏ | 78-FBGA (8x10.5) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ hoạt động | 0°C ~ +95°C (Tc) |
| Tốc độ dữ liệu | 1600 MT/s |
| Latency CAS | 11 |
| Burst Length | 8 |
| Refresh | 7.8 us at 85°C |
| Trạng thái RoHS | Compliant |
| Lead Free | Yes |
Cấu hình chân AS4C256M8D3LB-12BIN
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — DQ power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân A13 | VDD — Power supply |
| Chân B1 | VSS — Ground |
| Chân B2 | VDDQ — DQ power supply |
| Chân B3 | VSS — Ground |
| Chân B4 | VDDQ — DQ power supply |
| Chân B5 | VSS — Ground |
| Chân B6 | VDDQ — DQ power supply |
| Chân B7 | VSS — Ground |
| Chân B8 | VDDQ — DQ power supply |
| Chân B9 | VSS — Ground |
| Chân B10 | VDDQ — DQ power supply |
| Chân B11 | VSS — Ground |
| Chân B12 | VDDQ — DQ power supply |
| Chân B13 | VSS — Ground |
| Chân C1 | A0 — Address input 0 |
| Chân C2 | A1 — Address input 1 |
| Chân C3 | A2 — Address input 2 |
| Chân C4 | A3 — Address input 3 |
| Chân C5 | A4 — Address input 4 |
| Chân C6 | A5 — Address input 5 |
| Chân C7 | A6 — Address input 6 |
| Chân C8 | A7 — Address input 7 |
| Chân C9 | A8 — Address input 8 |
| Chân C10 | A9 — Address input 9 |
| Chân C11 | A10/AP — Address input 10 / Auto-precharge |
| Chân C12 | A11 — Address input 11 |
| Chân C13 | A12 — Address input 12 |
| Chân D1 | BA0 — Bank address 0 |
| Chân D2 | BA1 — Bank address 1 |
| Chân D3 | BA2 — Bank address 2 |
| Chân D4 | RAS# — Row address strobe |
| Chân D5 | CAS# — Column address strobe |
| Chân D6 | WE# — Write enable |
| Chân D7 | CS# — Chip select |
| Chân D8 | ODT — On-die termination |
| Chân D9 | CKE — Clock enable |
| Chân D10 | CK — Clock (positive) |
| Chân D11 | CK# — Clock (negative) |
| Chân D12 | RESET# — Reset |
| Chân D13 | VREFCA — Reference voltage for command/address |
| Chân E1 | VDD — Power supply |
| Chân E2 | VSS — Ground |
| Chân E3 | VDD — Power supply |
| Chân E4 | VSS — Ground |
| Chân E5 | VDD — Power supply |
| Chân E6 | VSS — Ground |
| Chân E7 | VDD — Power supply |
| Chân E8 | VSS — Ground |
| Chân E9 | VDD — Power supply |
| Chân E10 | VSS — Ground |
| Chân E11 | VDD — Power supply |
| Chân E12 | VSS — Ground |
| Chân E13 | VDD — Power supply |
| Chân F1 | VSS — Ground |
| Chân F2 | VDD — Power supply |
| Chân F3 | VSS — Ground |
| Chân F4 | VDD — Power supply |
| Chân F5 | VSS — Ground |
| Chân F6 | VDD — Power supply |
| Chân F7 | VSS — Ground |
| Chân F8 | VDD — Power supply |
| Chân F9 | VSS — Ground |
| Chân F10 | VDD — Power supply |
| Chân F11 | VSS — Ground |
| Chân F12 | VDD — Power supply |
| Chân F13 | VSS — Ground |
| Chân G1 | VDDQ — DQ power supply |
| Chân G2 | VSS — Ground |
| Chân G3 | VDDQ — DQ power supply |
| Chân G4 | VSS — Ground |
| Chân G5 | VDDQ — DQ power supply |
| Chân G6 | VSS — Ground |
| Chân G7 | VDDQ — DQ power supply |
| Chân G8 | VSS — Ground |
| Chân G9 | VDDQ — DQ power supply |
| Chân G10 | VSS — Ground |
| Chân G11 | VDDQ — DQ power supply |
| Chân G12 | VSS — Ground |
| Chân G13 | VDDQ — DQ power supply |
| Chân H1 | VSS — Ground |
| Chân H2 | VDDQ — DQ power supply |
| Chân H3 | VSS — Ground |
| Chân H4 | VDDQ — DQ power supply |
| Chân H5 | VSS — Ground |
| Chân H6 | VDDQ — DQ power supply |
| Chân H7 | VSS — Ground |
| Chân H8 | VDDQ — DQ power supply |
| Chân H9 | VSS — Ground |
| Chân H10 | VDDQ — DQ power supply |
| Chân H11 | VSS — Ground |
| Chân H12 | VDDQ — DQ power supply |
| Chân H13 | VSS — Ground |
Ứng dụng tiêu biểu
AS4C256M8D3LB-12BIN phù hợp cho 6 Áp dụngs: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, IoT Gateways.
Embedded Systems
The AS4C256M8D3LB-12BIN is ideal for embedded systems requiring low-power, high-density memory. Its 2Gbit capacity and x8 organization provide ample storage for operating systems and applications. The 1.35V operation reduces power consumption, extending battery life in portable devices. The 78-FBGA package saves PCB space, enabling compact designs. With a data rate of 1600 MT/s, it supports fast data processing for real-time applications. The device's wide operating temperature range (0°C to +95°C) ensures reliability in industrial environments.
Được đề xuất
Networking Equipment
In networking equipment such as routers and switches, the AS4C256M8D3LB-12BIN provides high-bandwidth memory for packet buffering and routing tables. Its 1600 MT/s data rate ensures fast data throughput, while the low 1.35V supply reduces power dissipation in dense line cards. The x8 organization allows flexible memory expansion. The device's on-die termination improves signal integrity on high-speed buses, critical for reliable operation in noisy environments. The 78-FBGA package is suitable for compact network modules.
Được đề xuất
Industrial Computing
The AS4C256M8D3LB-12BIN is well-suited for industrial computing applications such as PLCs, HMI panels, and edge servers. Its wide temperature range (0°C to +95°C) ensures operation in harsh environments. The low voltage (1.35V) reduces heat generation, improving system reliability. The 2Gbit density provides sufficient memory for complex control algorithms and data logging. The device's high reliability and long lifecycle make it a preferred choice for industrial designs. The 78-FBGA package is robust and suitable for vibration-prone environments.
Được đề xuất
Consumer Electronics
For consumer electronics like smart TVs, set-top boxes, and gaming consoles, the AS4C256M8D3LB-12BIN offers a cost-effective memory solution. Its 2Gbit capacity supports high-definition video streaming and multitasking. The low power consumption is ideal for energy-efficient devices. The 1600 MT/s data rate ensures smooth performance for multimedia applications. The compact 78-FBGA package allows slim device designs. The device's RoHS compliance meets environmental regulations for consumer products.
Được đề xuất
Automotive Infotainment
The AS4C256M8D3LB-12BIN is suitable for automotive infotainment systems, providing reliable memory for navigation, audio, and display applications. Its wide temperature range and low power consumption are critical for automotive environments. The 2Gbit density supports complex user interfaces and map data. The device's high-speed interface (1600 MT/s) enables fast data access for real-time navigation. The 78-FBGA package is compact, fitting into space-constrained head units. The device's long lifecycle ensures availability for automotive production.
Được đề xuất
IoT Gateways
In IoT gateways, the AS4C256M8D3LB-12BIN provides memory for data aggregation and protocol processing. Its low power consumption is essential for always-on devices. The 2Gbit capacity allows buffering of sensor data and firmware updates. The 1600 MT/s data rate supports high-throughput communication. The device's small footprint is ideal for compact gateway designs. The wide temperature range ensures operation in outdoor or industrial settings. The device's reliability is crucial for unattended operation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho AS4C256M8D3LB-12BIN — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | AS4C256M8D3LB-12BCN | AS4C256M8D3LB-12BINTR | AS4C256M8D3LB-12BCNTR | MT41K256M8DA-125 |
|---|---|---|---|---|---|
| Package | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) |
| Brand | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Micron Technology |
| Memory Size | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) |
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (vsMT41K256M8DA-125)
- Wide operating temperature range (0°C to +95°C) suitable for industrial applications (vsAS4C256M8D3LB-12BCN)
- Drop-in replacement for Micron MT41K256M8DA-125 with verified compatibility (vsMT41K256M8DA-125)
Ghi chú thiết kế
The AS4C256M8D3LB-12BIN operates from a 1.35V supply (1.283V to 1.45V). Ensure the power supply is stable and well-regulated. Use a low-impedance power plane and place 0.1uF decoupling capacitors close to each VDD and VDDQ pin. Additionally, a 10uF bulk capacitor should be placed near the device to handle transient currents. Proper decoupling is critical to maintain signal integrity and prevent data corruption.
Follow JEDEC DDR3L layout guidelines for high-speed signals. Keep the trace lengths for DQ, DQS, and address/command signals matched to minimize skew. Use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) for the data and clock lines. Place the device close to the controller to reduce trace lengths. Ensure a solid ground plane beneath the device to provide a low-inductance return path.
The AS4C256M8D3LB-12BIN has a maximum operating temperature of +95°C (case). In high-ambient-temperature environments, ensure adequate airflow or heatsinking. The 78-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate the power dissipation (VDD * IDD) and verify the junction temperature stays within limits. For typical operation at 1.35V and 200mA, power is 0.27W, which is manageable with standard PCB cooling.
Thông tin tuân thủ
RoHS compliant per distributor data. Lead-free. No AEC-Q100 qualification for this memory device.
