AS4C256M8D3LB-12BIN - 2Gbit DDR3L SDRAM 78-FBGA | Alliance Memory
MPN： AS4C256M8D3LB-12BIN ✓ 啟用中AS4C256M8D3LB-12BIN 概覽
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) than standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory in laptops, embedded systems, and networking equipment. DDR3L is backward compatible with DDR3 slots in many cases, making it a popular choice for upgrades and new designs.
Key features include a parallel interface with a data rate of 1600 MT/s, a burst length of 8, and on-die termination (ODT) for improved signal integrity. The device supports auto-refresh and self-refresh modes, with a typical refresh period of 7.8 us at 85°C. It also features programmable CAS latency, additive latency, and write latency, allowing flexibility in system timing. The 78-FBGA package is optimized for space-constrained designs, with a compact footprint of 8x10.5 mm.
Technically, the AS4C256M8D3LB-12BIN uses a 2Gbit DRAM cell array with a 8n-prefetch architecture, enabling high-speed data transfer. The device includes a DLL (Delay-Locked Loop) for precise clock alignment and supports dynamic ODT for improved signal quality. It is fabricated using a advanced CMOS process, ensuring low leakage and high reliability. The operating temperature range is 0°C to +95°C (case temperature), making it suitable for commercial and industrial applications.
Typical applications include embedded systems, networking equipment (routers, switches), industrial computing, and consumer electronics such as set-top boxes and smart TVs. Its low voltage and high density make it ideal for battery-powered devices and energy-efficient designs. The device is also used in automotive infotainment systems where reliability and temperature range are critical.
When designing with this memory, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. The VREFCA and VREFDQ pins should be bypassed with 0.1uF capacitors. Also, follow the JEDEC DDR3L layout guidelines for signal integrity, especially for high-speed signals. The device supports a 1.35V supply, so ensure the power supply is stable and within the specified range.
直接替換替代品，適用於 AS4C256M8D3LB-12BIN — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： AS4C256M8D3LB-12BIN （相同外形與佔位） — 差異在於 Data Rate, Supply Voltage, Burst Length, CAS Latency, Memory Size.
AS4C256M8D3LB-12BCN
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C256M8D3LB-12BINTR
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C256M8D3LB-12BCNTR
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M8DA-125
✅ 直接替換✗ 缺貨
$2.85 / 單位
查看資料表 →IS43TR16256AL-125KBL
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →NT5CC256M16DP-DI
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →AS4C256M8D3LB-12BIN 最大額定值與電氣特性
| 記憶體類型 | SDRAM - DDR3L |
| 記憶體容量 | 2Gbit (256M x 8) |
| 介面 | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| 供應電壓 | 1.283V ~ 1.45V |
| 封裝 / 外殼 | 78-FBGA (8x10.5) |
| 安裝類型 | Surface Mount |
| 工作溫度 | 0°C ~ +95°C (Tc) |
| 資料速率 | 1600 MT/s |
| CAS 延遲 | 11 |
| Burst Length | 8 |
| Refresh | 7.8 us at 85°C |
| RoHS 狀態 | Compliant |
| Lead Free | Yes |
AS4C256M8D3LB-12BIN 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDDQ — DQ power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
| 腳位 A13 | VDD — Power supply |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | VDDQ — DQ power supply |
| 腳位 B3 | VSS — Ground |
| 腳位 B4 | VDDQ — DQ power supply |
| 腳位 B5 | VSS — Ground |
| 腳位 B6 | VDDQ — DQ power supply |
| 腳位 B7 | VSS — Ground |
| 腳位 B8 | VDDQ — DQ power supply |
| 腳位 B9 | VSS — Ground |
| 腳位 B10 | VDDQ — DQ power supply |
| 腳位 B11 | VSS — Ground |
| 腳位 B12 | VDDQ — DQ power supply |
| 腳位 B13 | VSS — Ground |
| 腳位 C1 | A0 — Address input 0 |
| 腳位 C2 | A1 — Address input 1 |
| 腳位 C3 | A2 — Address input 2 |
| 腳位 C4 | A3 — Address input 3 |
| 腳位 C5 | A4 — Address input 4 |
| 腳位 C6 | A5 — Address input 5 |
| 腳位 C7 | A6 — Address input 6 |
| 腳位 C8 | A7 — Address input 7 |
| 腳位 C9 | A8 — Address input 8 |
| 腳位 C10 | A9 — Address input 9 |
| 腳位 C11 | A10/AP — Address input 10 / Auto-precharge |
| 腳位 C12 | A11 — Address input 11 |
| 腳位 C13 | A12 — Address input 12 |
| 腳位 D1 | BA0 — Bank address 0 |
| 腳位 D2 | BA1 — Bank address 1 |
| 腳位 D3 | BA2 — Bank address 2 |
| 腳位 D4 | RAS# — Row address strobe |
| 腳位 D5 | CAS# — Column address strobe |
| 腳位 D6 | WE# — Write enable |
| 腳位 D7 | CS# — Chip select |
| 腳位 D8 | ODT — On-die termination |
| 腳位 D9 | CKE — Clock enable |
| 腳位 D10 | CK — Clock (positive) |
| 腳位 D11 | CK# — Clock (negative) |
| 腳位 D12 | RESET# — Reset |
| 腳位 D13 | VREFCA — Reference voltage for command/address |
| 腳位 E1 | VDD — Power supply |
| 腳位 E2 | VSS — Ground |
| 腳位 E3 | VDD — Power supply |
| 腳位 E4 | VSS — Ground |
| 腳位 E5 | VDD — Power supply |
| 腳位 E6 | VSS — Ground |
| 腳位 E7 | VDD — Power supply |
| 腳位 E8 | VSS — Ground |
| 腳位 E9 | VDD — Power supply |
| 腳位 E10 | VSS — Ground |
| 腳位 E11 | VDD — Power supply |
| 腳位 E12 | VSS — Ground |
| 腳位 E13 | VDD — Power supply |
| 腳位 F1 | VSS — Ground |
| 腳位 F2 | VDD — Power supply |
| 腳位 F3 | VSS — Ground |
| 腳位 F4 | VDD — Power supply |
| 腳位 F5 | VSS — Ground |
| 腳位 F6 | VDD — Power supply |
| 腳位 F7 | VSS — Ground |
| 腳位 F8 | VDD — Power supply |
| 腳位 F9 | VSS — Ground |
| 腳位 F10 | VDD — Power supply |
| 腳位 F11 | VSS — Ground |
| 腳位 F12 | VDD — Power supply |
| 腳位 F13 | VSS — Ground |
| 腳位 G1 | VDDQ — DQ power supply |
| 腳位 G2 | VSS — Ground |
| 腳位 G3 | VDDQ — DQ power supply |
| 腳位 G4 | VSS — Ground |
| 腳位 G5 | VDDQ — DQ power supply |
| 腳位 G6 | VSS — Ground |
| 腳位 G7 | VDDQ — DQ power supply |
| 腳位 G8 | VSS — Ground |
| 腳位 G9 | VDDQ — DQ power supply |
| 腳位 G10 | VSS — Ground |
| 腳位 G11 | VDDQ — DQ power supply |
| 腳位 G12 | VSS — Ground |
| 腳位 G13 | VDDQ — DQ power supply |
| 腳位 H1 | VSS — Ground |
| 腳位 H2 | VDDQ — DQ power supply |
| 腳位 H3 | VSS — Ground |
| 腳位 H4 | VDDQ — DQ power supply |
| 腳位 H5 | VSS — Ground |
| 腳位 H6 | VDDQ — DQ power supply |
| 腳位 H7 | VSS — Ground |
| 腳位 H8 | VDDQ — DQ power supply |
| 腳位 H9 | VSS — Ground |
| 腳位 H10 | VDDQ — DQ power supply |
| 腳位 H11 | VSS — Ground |
| 腳位 H12 | VDDQ — DQ power supply |
| 腳位 H13 | VSS — Ground |
典型應用
AS4C256M8D3LB-12BIN 適用於 6 應用s: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, IoT Gateways.
Embedded Systems
The AS4C256M8D3LB-12BIN is ideal for embedded systems requiring low-power, high-density memory. Its 2Gbit capacity and x8 organization provide ample storage for operating systems and applications. The 1.35V operation reduces power consumption, extending battery life in portable devices. The 78-FBGA package saves PCB space, enabling compact designs. With a data rate of 1600 MT/s, it supports fast data processing for real-time applications. The device's wide operating temperature range (0°C to +95°C) ensures reliability in industrial environments.
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Networking Equipment
In networking equipment such as routers and switches, the AS4C256M8D3LB-12BIN provides high-bandwidth memory for packet buffering and routing tables. Its 1600 MT/s data rate ensures fast data throughput, while the low 1.35V supply reduces power dissipation in dense line cards. The x8 organization allows flexible memory expansion. The device's on-die termination improves signal integrity on high-speed buses, critical for reliable operation in noisy environments. The 78-FBGA package is suitable for compact network modules.
推薦
Industrial Computing
The AS4C256M8D3LB-12BIN is well-suited for industrial computing applications such as PLCs, HMI panels, and edge servers. Its wide temperature range (0°C to +95°C) ensures operation in harsh environments. The low voltage (1.35V) reduces heat generation, improving system reliability. The 2Gbit density provides sufficient memory for complex control algorithms and data logging. The device's high reliability and long lifecycle make it a preferred choice for industrial designs. The 78-FBGA package is robust and suitable for vibration-prone environments.
推薦
Consumer Electronics
For consumer electronics like smart TVs, set-top boxes, and gaming consoles, the AS4C256M8D3LB-12BIN offers a cost-effective memory solution. Its 2Gbit capacity supports high-definition video streaming and multitasking. The low power consumption is ideal for energy-efficient devices. The 1600 MT/s data rate ensures smooth performance for multimedia applications. The compact 78-FBGA package allows slim device designs. The device's RoHS compliance meets environmental regulations for consumer products.
推薦
Automotive Infotainment
The AS4C256M8D3LB-12BIN is suitable for automotive infotainment systems, providing reliable memory for navigation, audio, and display applications. Its wide temperature range and low power consumption are critical for automotive environments. The 2Gbit density supports complex user interfaces and map data. The device's high-speed interface (1600 MT/s) enables fast data access for real-time navigation. The 78-FBGA package is compact, fitting into space-constrained head units. The device's long lifecycle ensures availability for automotive production.
推薦
IoT Gateways
In IoT gateways, the AS4C256M8D3LB-12BIN provides memory for data aggregation and protocol processing. Its low power consumption is essential for always-on devices. The 2Gbit capacity allows buffering of sensor data and firmware updates. The 1600 MT/s data rate supports high-throughput communication. The device's small footprint is ideal for compact gateway designs. The wide temperature range ensures operation in outdoor or industrial settings. The device's reliability is crucial for unattended operation.
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推薦產品摘要
工程參考資料，適用於 AS4C256M8D3LB-12BIN — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | AS4C256M8D3LB-12BCN | AS4C256M8D3LB-12BINTR | AS4C256M8D3LB-12BCNTR | MT41K256M8DA-125 |
|---|---|---|---|---|---|
| Package | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) | 78-FBGA (8x10.5) |
| Brand | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Alliance Memory, Inc. | Micron Technology |
| Memory Size | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) | 2Gbit (256M x 8) |
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C | 0°C ~ +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard DDR3 (對比MT41K256M8DA-125)
- Wide operating temperature range (0°C to +95°C) suitable for industrial applications (對比AS4C256M8D3LB-12BCN)
- Drop-in replacement for Micron MT41K256M8DA-125 with verified compatibility (對比MT41K256M8DA-125)
設計說明
The AS4C256M8D3LB-12BIN operates from a 1.35V supply (1.283V to 1.45V). Ensure the power supply is stable and well-regulated. Use a low-impedance power plane and place 0.1uF decoupling capacitors close to each VDD and VDDQ pin. Additionally, a 10uF bulk capacitor should be placed near the device to handle transient currents. Proper decoupling is critical to maintain signal integrity and prevent data corruption.
Follow JEDEC DDR3L layout guidelines for high-speed signals. Keep the trace lengths for DQ, DQS, and address/command signals matched to minimize skew. Use controlled impedance traces (typically 50 ohms single-ended, 100 ohms differential) for the data and clock lines. Place the device close to the controller to reduce trace lengths. Ensure a solid ground plane beneath the device to provide a low-inductance return path.
The AS4C256M8D3LB-12BIN has a maximum operating temperature of +95°C (case). In high-ambient-temperature environments, ensure adequate airflow or heatsinking. The 78-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate the power dissipation (VDD * IDD) and verify the junction temperature stays within limits. For typical operation at 1.35V and 200mA, power is 0.27W, which is manageable with standard PCB cooling.
合規資訊
RoHS compliant per distributor data. Lead-free. No AEC-Q100 qualification for this memory device.
