NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
MPN: NT5CC256M16DP-FLNA ✓ نشطNT5CC256M16DP-FLNA نظرة عامة
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.
Key features include a 16-bit data bus, 8 internal banks, programmable CAS latency (CL 11, 12, 13), burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, and write leveling, ensuring robust operation in various system conditions. It also includes a data mask function and asynchronous reset for enhanced control.
The NT5CC256M16DP-FLNA utilizes advanced CMOS technology, achieving low power consumption and high reliability. The 96-ball BGA package provides excellent thermal and electrical performance, with a thermal resistance of and operating temperature range of -40°C to +95°C (industrial) and -40°C to +105°C (automotive). The device is RoHS compliant and lead-free.
Typical applications include networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and embedded computing systems. Its low voltage and high density make it ideal for memory-intensive tasks in space-constrained designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ pin requires a 240-ohm resistor to ground for calibration.
بدائل مباشرة لـ NT5CC256M16DP-FLNA — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CC256M16DP-FLNA (نفس عامل الشكل والبصمة) — يختلف في Package, Data Rate, Supply Voltage, CAS Latency, Interface.
NT5CC256M16DP-DI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16DP-DII
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16512B-125K
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
K4B4G1646E-BYMA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←NT5CC256M16DP-FLNA الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| التنظيم | 256M x 16 |
| Total Density | 4 Gb |
| جهد التغذية | 1.35 V (1.283 V to 1.45 V) |
| معدل البيانات | 1600 Mbps (PC3L-12800) |
| زمن الوصول CAS | 11, 12, 13 |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| الواجهة | SSTL-15 |
| العلبة | BGA-96 (13x9 mm) |
| درجة حرارة التشغيل | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Refresh | Auto self-refresh, auto precharge |
| الميزات | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset |
تكوين أطراف NT5CC256M16DP-FLNA
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ2 — Data input/output 2 |
| دبوس B3 | DQ3 — Data input/output 3 |
| دبوس C1 | VDDQ — I/O power supply |
| دبوس C2 | DQ4 — Data input/output 4 |
| دبوس C3 | DQ5 — Data input/output 5 |
| دبوس D1 | VSSQ — I/O ground |
| دبوس D2 | DQ6 — Data input/output 6 |
| دبوس D3 | DQ7 — Data input/output 7 |
| دبوس E1 | DQS0 — Data strobe 0 |
| دبوس E2 | DQS0# — Data strobe 0 complement |
| دبوس E3 | VSS — Ground |
| دبوس F1 | A0 — Address input 0 |
| دبوس F2 | A1 — Address input 1 |
| دبوس F3 | A2 — Address input 2 |
| دبوس G1 | A3 — Address input 3 |
| دبوس G2 | A4 — Address input 4 |
| دبوس G3 | A5 — Address input 5 |
| دبوس H1 | A6 — Address input 6 |
| دبوس H2 | A7 — Address input 7 |
| دبوس H3 | A8 — Address input 8 |
| دبوس J1 | A9 — Address input 9 |
| دبوس J2 | A10/AP — Address input 10 / auto precharge |
| دبوس J3 | A11 — Address input 11 |
| دبوس K1 | A12 — Address input 12 |
| دبوس K2 | A13 — Address input 13 |
| دبوس K3 | A14 — Address input 14 |
| دبوس L1 | BA0 — Bank address 0 |
| دبوس L2 | BA1 — Bank address 1 |
| دبوس L3 | BA2 — Bank address 2 |
| دبوس M1 | CK — Clock input |
| دبوس M2 | CK# — Clock input complement |
| دبوس M3 | CKE — Clock enable |
| دبوس N1 | CS# — Chip select |
| دبوس N2 | RAS# — Row address strobe |
| دبوس N3 | CAS# — Column address strobe |
| دبوس P1 | WE# — Write enable |
| دبوس P2 | ODT — On-die termination |
| دبوس P3 | RESET# — Asynchronous reset |
| دبوس R1 | ZQ — Calibration reference (240 ohm to ground) |
| دبوس R2 | VDD — Power supply |
| دبوس R3 | VSS — Ground |
التطبيقات النموذجية
NT5CC256M16DP-FLNA مناسب لـ 6 التطبيقs: Networking Equipment, Industrial Automation, Automotive Infotainment, Embedded Computing, Data Acquisition Systems, Medical Devices.
Networking Equipment
The NT5CC256M16DP-FLNA provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1600 Mbps data rate support high-throughput packet processing. The 1.35V operation reduces power consumption in always-on network devices, while the industrial temperature range ensures reliability in uncontrolled environments. Placed on the memory bus with proper termination, it handles burst traffic efficiently, improving overall system performance.
موصى به
Industrial Automation
In industrial automation, the NT5CC256M16DP-FLNA offers reliable memory for PLCs and robotics controllers. Its wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it suitable for harsh factory floors. The auto self-refresh and write leveling features ensure data integrity during power fluctuations. It interfaces with industrial microcontrollers via a standard DDR3L bus, providing fast access for real-time control algorithms.
موصى به
Automotive Infotainment
The NT5CC256M16DP-FLNA supports automotive infotainment systems with its automotive temperature grade (-40°C to +105°C) and high bandwidth. It enables smooth multimedia playback and navigation. The 1.35V operation reduces heat generation in the cabin, and the BGA package withstands vibration. It connects to automotive SoCs via a DDR3L interface, providing fast data access for graphics and audio processing.
موصى به
Embedded Computing
For embedded computing, the NT5CC256M16DP-FLNA offers a balance of density and power efficiency. Its 4Gb capacity is ideal for Linux-based systems and edge computing. The low voltage (1.35V) extends battery life in portable devices. The device supports burst lengths of 8 and 4, optimizing memory throughput. It is compatible with a wide range of application processors, making it a versatile choice for custom embedded designs.
موصى به
Data Acquisition Systems
The NT5CC256M16DP-FLNA is used in data acquisition systems to buffer large amounts of sensor data. Its high data rate (1600 Mbps) allows rapid sampling and storage. The industrial temperature range ensures operation in remote monitoring stations. The auto precharge and data mask features simplify control logic. It interfaces with ADCs and DSPs via a DDR3L bus, enabling high-speed data logging.
موصى به
Medical Devices
In medical devices, the NT5CC256M16DP-FLNA provides reliable memory for imaging and monitoring equipment. Its low power consumption is critical for battery-operated devices. The industrial temperature range ensures stable operation in clinical environments. The device's error-free performance and long lifecycle make it suitable for medical applications. It connects to medical-grade processors, supporting real-time data processing.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CC256M16DP-FLNA — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CC256M16DP-DI | NT5CC256M16DP-DII | MT41K256M16HA-125 | IS43TR16512B-125K | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|
| Package | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | ISSI | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 8 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1866 Mbps |
| Temperature Range | -40°C to +95°C (industrial) | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 |
أبرز الفروقات
- Industrial and automotive temperature grades (مقابلMT41K256M16HA-125)
- Lower power consumption at 1.35V (مقابلK4B4G1646E-BYMA)
- Pin-compatible with multiple Nanya variants (مقابلIS43TR16512B-125K)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and DQS signals. Follow the layout guidelines in the Nanya datasheet to ensure signal integrity at 1600 Mbps.
The BGA-96 package has a thermal resistance of [DATA_NEEDED: theta_JA]. Ensure adequate airflow or a thermal pad for high-temperature operation. In automotive applications, consider the -40°C to +105°C range and design for heat dissipation.
Connect a 240-ohm resistor from the ZQ pin to ground for calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Ensure the supply voltage is within 1.283V to 1.45V to avoid data corruption.
معلومات الامتثال
RoHS compliant per Nanya datasheet. AEC-Q100 not specified; automotive grade may require additional qualification.
