NT5CC256M16DP-FLNA - 4Gb DDR3L SDRAM | Nanya Technology
MPN： NT5CC256M16DP-FLNA ✓ 啟用中NT5CC256M16DP-FLNA 概覽
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and industrial applications where power efficiency is critical.
Key features include a 16-bit data bus, 8 internal banks, programmable CAS latency (CL 11, 12, 13), burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, and write leveling, ensuring robust operation in various system conditions. It also includes a data mask function and asynchronous reset for enhanced control.
The NT5CC256M16DP-FLNA utilizes advanced CMOS technology, achieving low power consumption and high reliability. The 96-ball BGA package provides excellent thermal and electrical performance, with a thermal resistance of and operating temperature range of -40°C to +95°C (industrial) and -40°C to +105°C (automotive). The device is RoHS compliant and lead-free.
Typical applications include networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and embedded computing systems. Its low voltage and high density make it ideal for memory-intensive tasks in space-constrained designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ pin requires a 240-ohm resistor to ground for calibration.
直接替換替代品，適用於 NT5CC256M16DP-FLNA — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16DP-FLNA （相同外形與佔位） — 差異在於 Package, Data Rate, Supply Voltage, CAS Latency, Interface.
NT5CC256M16DP-DI
✅ 直接替換聯絡詢價
查看資料表 →NT5CC256M16DP-DII
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →IS43TR16512B-125K
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →NT5CC256M16DP-FLNA 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 組織 | 256M x 16 |
| Total Density | 4 Gb |
| 供應電壓 | 1.35 V (1.283 V to 1.45 V) |
| 資料速率 | 1600 Mbps (PC3L-12800) |
| CAS 延遲 | 11, 12, 13 |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| 介面 | SSTL-15 |
| 封裝 | BGA-96 (13x9 mm) |
| 工作溫度 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Refresh | Auto self-refresh, auto precharge |
| 功能特色 | Write leveling, dynamic ODT, ZQ calibration, data mask, asynchronous reset |
NT5CC256M16DP-FLNA 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — I/O power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
| 腳位 E1 | DQS0 — Data strobe 0 |
| 腳位 E2 | DQS0# — Data strobe 0 complement |
| 腳位 E3 | VSS — Ground |
| 腳位 F1 | A0 — Address input 0 |
| 腳位 F2 | A1 — Address input 1 |
| 腳位 F3 | A2 — Address input 2 |
| 腳位 G1 | A3 — Address input 3 |
| 腳位 G2 | A4 — Address input 4 |
| 腳位 G3 | A5 — Address input 5 |
| 腳位 H1 | A6 — Address input 6 |
| 腳位 H2 | A7 — Address input 7 |
| 腳位 H3 | A8 — Address input 8 |
| 腳位 J1 | A9 — Address input 9 |
| 腳位 J2 | A10/AP — Address input 10 / auto precharge |
| 腳位 J3 | A11 — Address input 11 |
| 腳位 K1 | A12 — Address input 12 |
| 腳位 K2 | A13 — Address input 13 |
| 腳位 K3 | A14 — Address input 14 |
| 腳位 L1 | BA0 — Bank address 0 |
| 腳位 L2 | BA1 — Bank address 1 |
| 腳位 L3 | BA2 — Bank address 2 |
| 腳位 M1 | CK — Clock input |
| 腳位 M2 | CK# — Clock input complement |
| 腳位 M3 | CKE — Clock enable |
| 腳位 N1 | CS# — Chip select |
| 腳位 N2 | RAS# — Row address strobe |
| 腳位 N3 | CAS# — Column address strobe |
| 腳位 P1 | WE# — Write enable |
| 腳位 P2 | ODT — On-die termination |
| 腳位 P3 | RESET# — Asynchronous reset |
| 腳位 R1 | ZQ — Calibration reference (240 ohm to ground) |
| 腳位 R2 | VDD — Power supply |
| 腳位 R3 | VSS — Ground |
典型應用
NT5CC256M16DP-FLNA 適用於 6 應用s: Networking Equipment, Industrial Automation, Automotive Infotainment, Embedded Computing, Data Acquisition Systems, Medical Devices.
Networking Equipment
The NT5CC256M16DP-FLNA provides high-density, low-power memory for routers and switches. Its 4Gb capacity and 1600 Mbps data rate support high-throughput packet processing. The 1.35V operation reduces power consumption in always-on network devices, while the industrial temperature range ensures reliability in uncontrolled environments. Placed on the memory bus with proper termination, it handles burst traffic efficiently, improving overall system performance.
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Industrial Automation
In industrial automation, the NT5CC256M16DP-FLNA offers reliable memory for PLCs and robotics controllers. Its wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it suitable for harsh factory floors. The auto self-refresh and write leveling features ensure data integrity during power fluctuations. It interfaces with industrial microcontrollers via a standard DDR3L bus, providing fast access for real-time control algorithms.
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Automotive Infotainment
The NT5CC256M16DP-FLNA supports automotive infotainment systems with its automotive temperature grade (-40°C to +105°C) and high bandwidth. It enables smooth multimedia playback and navigation. The 1.35V operation reduces heat generation in the cabin, and the BGA package withstands vibration. It connects to automotive SoCs via a DDR3L interface, providing fast data access for graphics and audio processing.
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Embedded Computing
For embedded computing, the NT5CC256M16DP-FLNA offers a balance of density and power efficiency. Its 4Gb capacity is ideal for Linux-based systems and edge computing. The low voltage (1.35V) extends battery life in portable devices. The device supports burst lengths of 8 and 4, optimizing memory throughput. It is compatible with a wide range of application processors, making it a versatile choice for custom embedded designs.
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Data Acquisition Systems
The NT5CC256M16DP-FLNA is used in data acquisition systems to buffer large amounts of sensor data. Its high data rate (1600 Mbps) allows rapid sampling and storage. The industrial temperature range ensures operation in remote monitoring stations. The auto precharge and data mask features simplify control logic. It interfaces with ADCs and DSPs via a DDR3L bus, enabling high-speed data logging.
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Medical Devices
In medical devices, the NT5CC256M16DP-FLNA provides reliable memory for imaging and monitoring equipment. Its low power consumption is critical for battery-operated devices. The industrial temperature range ensures stable operation in clinical environments. The device's error-free performance and long lifecycle make it suitable for medical applications. It connects to medical-grade processors, supporting real-time data processing.
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推薦產品摘要
工程參考資料，適用於 NT5CC256M16DP-FLNA — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16DP-DI | NT5CC256M16DP-DII | MT41K256M16HA-125 | IS43TR16512B-125K | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|
| Package | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) | BGA-96 (13x9 mm) |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | ISSI | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 8 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1866 Mbps |
| Temperature Range | -40°C to +95°C (industrial) | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| CAS Latency | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 | 11, 12, 13 | 11, 12, 13 | 12, 13, 14 |
主要差異化特點
- Industrial and automotive temperature grades (對比MT41K256M16HA-125)
- Lower power consumption at 1.35V (對比K4B4G1646E-BYMA)
- Pin-compatible with multiple Nanya variants (對比IS43TR16512B-125K)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and DQS signals. Follow the layout guidelines in the Nanya datasheet to ensure signal integrity at 1600 Mbps.
The BGA-96 package has a thermal resistance of [DATA_NEEDED: theta_JA]. Ensure adequate airflow or a thermal pad for high-temperature operation. In automotive applications, consider the -40°C to +105°C range and design for heat dissipation.
Connect a 240-ohm resistor from the ZQ pin to ground for calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Ensure the supply voltage is within 1.283V to 1.45V to avoid data corruption.
合規資訊
RoHS compliant per Nanya datasheet. AEC-Q100 not specified; automotive grade may require additional qualification.
