STMicroelectronics
STF25NM60ND - 600V 21A N-Ch MOSFET TO-220FP | STMicroelectronics
MPN: STF25NM60ND ✓ نشط
600 V Vdss
21 A Id
0.13 ohm Rds(on)
TO-220FP (isolated) Package
من $1
USD / وحدة
الحد الأدنى للطلب: 1 |
تم تحديث السعر: 2026-09-03
تسعير الكميات
| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $1 | $1.00 |
ℹ️ جميع الأسعار بالدولار الأمريكي
STF25NM60ND نظرة عامة
The STMicroelectronics STF25NM60ND is an N-channel 600 V power MOSFET built on the FDmesh II trench technology, rated for 21 A drain current (at Tc) and 40 W power dissipation in an isolated TO-220FP package. Its typical on-resistance of 0.13 ohm and integrated fast-recovery body diode make it well suited for off-line switched-mode power conversion.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical power. Within the component hierarchy, the STF25NM60ND belongs to the transistor family, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) class, which sits within the broader category of discrete semiconductors and power management components. Power MOSFETs are the switching elements in SMPS topologies such as flyback, forward, half-bridge and resonant converters.
Key features include the 600 V drain-source breakdown voltage rating for universal-mains rectified-bus applications, FDmesh II process technology that lowers RDS(on) and gate charge for improved efficiency, and the fast-recovery intrinsic body diode (indicated by the D suffix) that reduces reverse-recovery losses in hard-switched topologies such as two-switch forward and LLC converters. The F suffix in the part number denotes the TO-220FP fully molded isolated package, providing 2500 Vrms electrical isolation without an external insulator, simplifying heatsink mounting.
The FDmesh II stripe-trench architecture balances conduction and switching losses, allowing designers to optimize for either low-frequency conduction efficiency or high-frequency switching performance. Low gate charge reduces gate-drive losses, while the rugged body diode withstands avalanche events typical of transformer-leakage-inductance environments.
Typical applications include off-line flyback and forward AC-DC converters for industrial power supplies, PFC pre-regulator stages, motor drive inverter legs for light industrial loads, and high-voltage DC-DC modules for solar and telecom rectifiers.
Design tip: the TO-220FP isolated package has higher thermal resistance than standard TO-220, so verify junction temperature with proper heatsink sizing; drive the gate with a low-impedance driver (e.g., 10 ohm series resistor) to manage EMI from fast switching edges.
بدائل مباشرة لـ STF25NM60ND — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
لا تتوفر بدائل متوافقة تمامًا لهذا المنتج.
اطلب بدائلSTF25NM60ND الحدود القصوى والخصائص الكهربائية
| Polarity | N-Channel |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID at Tc) | 21 A |
| On-Resistance (RDS(on) typ) | 0.13 ohm |
| Power Dissipation (PD at Tc) | 40 W |
| Technology | FDmesh II trench |
| Body Diode | Fast recovery intrinsic |
| العلبة | TO-220FP (isolated) |
| نوع التركيب | Through Hole |
| Isolation | Fully molded isolated package (F suffix) |
| حالة RoHS | Compliant |
| Configuration | Single MOSFET |
تكوين أطراف STF25NM60ND
| دبوس 1 | Gate (G) — Gate control terminal |
| دبوس 2 | Drain (D) — Connected to heatsink tab, drain terminal |
| دبوس 3 | Source (S) — Source terminal |
منطقة التشغيل الآمن
تشغيل DC مستمر
التطبيقات النموذجية
STF25NM60ND مناسب لـ 3 التطبيقs: إدارة القدرة, التحكم في المحركات, إضاءة LED.
إدارة القدرة
التبديل والتنظيم في دوائر إمداد القدرة باستخدام STF25NM60ND.
التحكم في المحركات
تشغيل والتحكم في محركات DC/BLDC باستخدام STF25NM60ND.
إضاءة LED
تشغيل سلاسل ومصفوفات LED باستخدام STF25NM60ND.
لا تتوفر أسئلة شائعة لهذا المنتج.
بيانات مرجعية هندسية لـ STF25NM60ND — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
Choose the STF25NM60ND when you need a 600 V, 21 A N-channel MOSFET with an isolated TO-220FP package for off-line power converters requiring a fast-recovery body diode and no external isolation pad. Choose STP25NM60ND for non-isolated TO-220 mounting with better thermal performance. Choose STB25NM60ND (D2PAK) for surface-mount-friendly boards. Choose STF23NM60ND when slightly lower current (23 A class) suffices at lower cost. For 650 V designs with more margin, consider STF24NM65N. The isolated FP package trades thermal resistance for mounting convenience and isolation.
معلومات الامتثال
RoHS
Compliant
REACH
Unknown
AEC-Q100
خالٍ من الرصاص
خالٍ من الهالوجين
Unknown
المعادن المتنازع عليها
Unknown
RoHS compliance per STMicroelectronics product listing; other statuses not stated in provided data.
تم التحقق من البيانات في: 2026-08-29
— تم التحقق من البيانات وتنسيقها بواسطة فريق هندسة المكونات في XAIPART
عمليات بحث ذات صلة
STF25NM60ND datasheet PDF
STF25NM60ND STMicroelectronics MOSFET
STF25NM60ND pinout TO-220FP
600V N-channel MOSFET 21A isolated TO-220FP
STF25NM60ND equivalent replacement
STF25NM60ND vs STF23NM60ND
STF25NM60ND price buy
STF25NM60ND flyback converter switch
fast body diode 600V MOSFET
what replaces STF25NM60ND
المكونات والمصطلحات ذات الصلة
STMicroelectronics
STF25NM60ND
STP25NM60ND
STB25NM60ND
STF23NM60ND
STF24NM65N
power MOSFET
N-channel MOSFET
discrete semiconductor
FDmesh II
TO-220FP
TO-220
D2PAK
fast recovery body diode
RDS(on)
600 V breakdown voltage
RoHS
off-line SMPS
flyback converter
PFC
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