1EDN7116GXTMA1 vs 1ED44176N01FXUMA1 Comparison

Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1ED44176N01FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7116GXTMA1 1ED44176N01FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.54
Function Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver with integrated OCP, FAULT, EN
Driver Configuration Non-inverting, single low-side β€”
Number of Drivers 1 β€”
Peak Source Current 2 A (typ) β€”
Peak Sink Current 4 A (typ) β€”
Input Type Truly Differential Input (TDI) β€”
Supply Voltage (VCC) 4.5 V to 5.5 V β€”
Switch-Node Blocking Voltage 200 V (max) β€”
Propagation Delay (Typ) 9 ns β€”
Rise Time (Typ) 3 ns β€”
Fall Time (Typ) 3 ns β€”
Quiescent Current (Typ) 0.6 mA β€”
Miller Clamp Integrated, active β€”
UVLO Yes (VCC and gate-rail monitored) β€”
Operating Temperature Range -40 Β°C to +125 Β°C β€”
Package PG-VSON-10-4 (3.0 mm Γ— 3.0 mm) 8-pin PG-DSO8 (SOIC-8)
Mounting Type Surface Mount Surface Mount
MSL Level MSL3 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET β€”
Configuration β€” Non-inverting, single-channel, low-side
Number of Channels β€” 1
Input Compatibility β€” CMOS, TTL
VCC Supply Voltage Range β€” 4.5 V to 25 V
Peak Source Current (typ.) β€” 0.8 A
Peak Sink Current (typ.) β€” 1.75 A
Propagation Delay (typ.) β€” 50 ns
OCP Threshold Tolerance β€” Β±5%
OCP Reference β€” 800 mV to 1.2 V (per LCSC listing)
Enable Input β€” Yes (EN, active-high)
Fault Output β€” Yes (FAULT, open-drain)
Operating Temperature β€” -40 C to +125 C
Family β€” EiceDRIVER

Datasheets & Resources

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