1EDN7116GXTMA1 vs 1ED44176N01FXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7116GXTMA1 sa pamamagitan ng Infineon at 1ED44176N01FXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7116GXTMA1 1ED44176N01FXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver with integrated OCP, FAULT, EN
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Hanay ng Temperature na Operasyon -40 °C to +125 °C —
Packhaging PG-VSON-10-4 (3.0 mm × 3.0 mm) 8-pin PG-DSO8 (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL3 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Configuration — Non-inverting, single-channel, low-side
Number of Channels — 1
Input Compatibility — CMOS, TTL
VCC Supply Voltage Range — 4.5 V to 25 V
Peak Source Current (typ.) — 0.8 A
Peak Sink Current (typ.) — 1.75 A
Propagation Delay (typ.) — 50 ns
OCP Threshold Tolerance — ±5%
OCP Reference — 800 mV to 1.2 V (per LCSC listing)
Enable Input — Yes (EN, active-high)
Fault Output — Yes (FAULT, open-drain)
Temperature na Operasyon — -40 C to +125 C
Family — EiceDRIVER

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita