1EDN7116GXTMA1 vs 1ED44176N01FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7116GXTMA1 disebabkan oleh Infineon dan 1ED44176N01FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7116GXTMA1 1ED44176N01FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Low-side gate driver with integrated OCP, FAULT, EN
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Gambaran Suhu Operasi -40 °C to +125 °C —
Kemasan PG-VSON-10-4 (3.0 mm × 3.0 mm) 8-pin PG-DSO8 (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL3 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Configuration — Non-inverting, single-channel, low-side
Number of Channels — 1
Input Compatibility — CMOS, TTL
VCC Supply Voltage Range — 4.5 V to 25 V
Peak Source Current (typ.) — 0.8 A
Peak Sink Current (typ.) — 1.75 A
Propagation Delay (typ.) — 50 ns
OCP Threshold Tolerance — ±5%
OCP Reference — 800 mV to 1.2 V (per LCSC listing)
Enable Input — Yes (EN, active-high)
Fault Output — Yes (FAULT, open-drain)
Suhu Operasi — -40 C to +125 C
Family — EiceDRIVER

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