2ED2106S06FXUMA1 vs 2EDL6014ACG2DXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED2106S06FXUMA1 sa pamamagitan ng Infineon at 2EDL6014ACG2DXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED2106S06FXUMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns —
Bilang ng Outputs 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
Bilang ng Pins 8 —
Packhaging PG-DSO-8-69 (DSO-8) 11-WQFN (2.2 x 2.2 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Bootstrap Diode Integrated —
Hanay ng Temperature na Operasyon -40C to +125C —
Packaging Tape & Reel —
Type ng Output Half-Bridge, Non-Inverting —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
Output Kumpigurasyon — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Temperature na Operasyon — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

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