2ED2108S06FXUMA1 vs 2ED21834S06JXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2108S06FXUMA1 disebabkan oleh Infineon dan 2ED21834S06JXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2108S06FXUMA1 2ED21834S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 —
Gate Type N-Channel MOSFET, IGBT —
Bilangan Output 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes Yes
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Operasi -40 C to +125 C —
Kemasan PG-DSO-8-53 (DSO-8) PG-DSO-14-49 (DSO-14)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Bilangan Pin — 14
Gambaran Suhu Operasi — -40 °C to +125 °C
Standard Reel Quantity — 3000

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