2ED2108S06FXUMA1 vs 2ED21834S06JXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2108S06FXUMA1 dari Infineon dan 2ED21834S06JXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2108S06FXUMA1 2ED21834S06JXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 —
Gate Type N-Channel MOSFET, IGBT —
Jumlah Output 2 (high-side + low-side) —
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes Yes
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8-53 (DSO-8) PG-DSO-14-49 (DSO-14)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Jumlah Pin — 14
Rentang Suhu Kerja — -40 °C to +125 °C
Standard Reel Quantity — 3000

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