2ED2108S06FXUMA1 vs 2ED2183S06FXUMA1 Comparison

Detailed side-by-side comparison of 2ED2108S06FXUMA1 by Infineon and 2ED2183S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2108S06FXUMA1 2ED2183S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration Half-Bridge —
Number of Drivers 1 1
Gate Type N-Channel MOSFET, IGBT —
Number of Outputs 2 (high-side + low-side) 1 (half-bridge: high-side + low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) VCC and VBS
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Operating Temperature -40 C to +125 C -40 C to +125 C
Package PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 2
RoHS Status Compliant Compliant
Driver Type — Half-Bridge Gate Driver
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Rise Time — 15 ns
Fall Time — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

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