2ED2108S06FXUMA1 vs 2ED2183S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2108S06FXUMA1 dari Infineon dan 2ED2183S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2108S06FXUMA1 2ED2183S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 1
Gate Type N-Channel MOSFET, IGBT —
Jumlah Output 2 (high-side + low-side) 1 (half-bridge: high-side + low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) VCC and VBS
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 2
Status RoHS Compliant Compliant
Driver Type — Half-Bridge Gate Driver
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Waktu naik — 15 ns
Waktu Menurun — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

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