2ED2108S06FXUMA1 vs 2ED2183S06FXUMA1 Comparación
Comparación detallada lado a lado de 2ED2108S06FXUMA1 por Infineon y 2ED2183S06FXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2ED2108S06FXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,30 | $1,05 |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 1 | 1 |
| Gate Type | N-Channel MOSFET, IGBT | — |
| Número de salidas | 2 (high-side + low-side) | 1 (half-bridge: high-side + low-side) |
| Logic Input | Non-Inverting | — |
| Input Voltage (VCC) | 10 V to 20 V | — |
| High-Side Bootstrap Voltage Rating | 650 V | — |
| Peak Source Current (typ.) | 0.29 A | — |
| Peak Sink Current (typ.) | 0.7 A | — |
| Integrated Bootstrap Diode | Yes | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) | VCC and VBS |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay ns] | — |
| Rise / Fall Time (typ.) | [DATA_NEEDED: tr/tf ns] | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Encapsulado | PG-DSO-8-53 (DSO-8) | PG-DSO-8-53 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 2 |
| Estado RoHS | Compliant | Compliant |
| Driver Type | — | Half-Bridge Gate Driver |
| Configuration | — | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |