2ED2108S06FXUMA1 vs 2ED2183S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2108S06FXUMA1 disebabkan oleh Infineon dan 2ED2183S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2108S06FXUMA1 2ED2183S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 1 1
Gate Type N-Channel MOSFET, IGBT —
Bilangan Output 2 (high-side + low-side) 1 (half-bridge: high-side + low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) VCC and VBS
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Suhu Operasi -40 C to +125 C -40 C to +125 C
Kemasan PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 2
Status RoHS Compliant Compliant
Driver Type — Half-Bridge Gate Driver
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Masa Pertambahan — 15 ns
Masa jatuh — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

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