2EDB7259KXUMA1 vs 2ED2103S06FXUMA1 Comparison
Detailed side-by-side comparison of 2EDB7259KXUMA1 by Infineon and 2ED2103S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2EDB7259KXUMA1 | 2ED2103S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Isolated Gate Driver IC | — |
| Number of Channels | 2 | — |
| Source Drive Current | 5 A | — |
| Sink Drive Current | 9 A | — |
| Isolation Voltage | 2500 Vrms | — |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | — |
| Propagation Delay | 38 ns | — |
| Supply Voltage | 12 V to 18 V | — |
| Operating Temperature | -40C to +125C | — |
| Package | 13-LGA (5x5 mm) | PG-DSO-8-69 (DSO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Coreless Transformer Isolation | High-Voltage Level Shift (SOI) |
| Protection Features | UVLO, Short-Circuit, Miller Clamp | — |
| Output Stage | Rail-to-rail p-channel sourcing | — |
| RoHS Status | Compliant | Compliant |
| Function | — | Half-Bridge Gate Driver |
| Configuration | — | Non-Inverting |
| Number of Drivers | — | 2 (high-side + low-side) |
| Driven Device Type | — | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | — | 650 V |
| Bootstrap Voltage (Max) | — | 675 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Bootstrap Diode | — | Integrated |
| Logic Input Compatibility | — | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | — | Yes (VCC and VBS) |
| Operating Temperature Range | — | -40C to +125C |
| MSL Level | — | [DATA_NEEDED: MSL level] |