2EDL6014ACG2DXTMA1 vs 2ED2103S06FXUMA1 Comparison

Detailed side-by-side comparison of 2EDL6014ACG2DXTMA1 by Infineon and 2ED2103S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL6014ACG2DXTMA1 2ED2103S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) —
Output Configuration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Operating Temperature -40 C to +125 C —
Package 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
Mounting Type Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Function — Half-Bridge Gate Driver
Configuration — Non-Inverting
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Operating Temperature Range — -40C to +125C
MSL Level — [DATA_NEEDED: MSL level]
RoHS Status — Compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote