2EDL6014ACG2DXTMA1 vs 2ED2103S06FXUMA1 比較

詳細並排比較 2EDL6014ACG2DXTMA1 由 Infineon 與 2ED2103S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 啟用中

規格比較

參數 2EDL6014ACG2DXTMA1 2ED2103S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) —
輸出配置 Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
工作溫度 -40 C to +125 C —
封裝 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
安裝類型 Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
功能 — Half-Bridge Gate Driver
Configuration — Non-Inverting
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
工作溫度範圍 — -40C to +125C
MSL 等級 — [DATA_NEEDED: MSL level]
RoHS 狀態 — Compliant

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