2EDN7434RXTMA1 vs 1EDN7146UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDN7434RXTMA1 disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDN7434RXTMA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
Kemasan PG-TSSOP-8 (3.0 x 3.0 mm) PG-VSON-1 (6-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature] -40C to +125C
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Active Output Voltage Clamping Yes —
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Masa Pertambahan — [DATA_NEEDED: typical rise time ns]
Masa jatuh — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Topology Support — Half-bridge, low-side, high-side

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