2EDN7434RXTMA1 vs 1EDN7146UXTSA1 比較

詳細並排比較 2EDN7434RXTMA1 由 Infineon 與 1EDN7146UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ 啟用中
Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 2EDN7434RXTMA1 1EDN7146UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
封裝 PG-TSSOP-8 (3.0 x 3.0 mm) PG-VSON-1 (6-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature] -40C to +125C
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Active Output Voltage Clamping Yes —
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升時間 — [DATA_NEEDED: typical rise time ns]
下降時間 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Topology Support — Half-bridge, low-side, high-side

資料表與資源

瀏覽所有產品 建立 BOM 索取報價