2N7002L vs BSS123IXTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2N7002L sa pamamagitan ng onsemi at BSS123IXTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSS123IXTSA1 BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 - 100V N-Ch 190mA OptiMOS MOSFET | Infineon

BSS123IXTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2N7002L BSS123IXTSA1
Brand onsemi Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET OptiMOS Small-Signal
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging SOT-23 (SOT-23-3) PG-SOT-23-3 (SOT-23-3)
Configuration Single FET Single N-Channel
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
Tindminan RoHS [DATA_NEEDED: RoHS status] —
Continuous Drain Current (ID) at TA=25C — 190 mA
Power Dissipation (PD) at TA=25C — 500 mW
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
Hanay ng Temperature na Operasyon — -55C to +150C (per family datasheet)
Qualification — Industrial
Lead-Free / RoHS — Yes (per distributor listing)
Level ng MSL — [DATA_NEEDED: MSL rating]
Gate Drive Logic Level — Logic-level compatible

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