2N7002L vs BSS123IXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002L disebabkan oleh onsemi dan BSS123IXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002L BSS123IXTSA1
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET OptiMOS Small-Signal
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23 (SOT-23-3) PG-SOT-23-3 (SOT-23-3)
Configuration Single FET Single N-Channel
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
Status RoHS [DATA_NEEDED: RoHS status] —
Continuous Drain Current (ID) at TA=25C — 190 mA
Power Dissipation (PD) at TA=25C — 500 mW
RDS(on) (typical, VGS=10 V) — 2.4 ohm
RDS(on) (max per family datasheet) — 6 ohm
Gambaran Suhu Operasi — -55C to +150C (per family datasheet)
Qualification — Industrial
Lead-Free / RoHS — Yes (per distributor listing)
Aras MSL — [DATA_NEEDED: MSL rating]
Gate Drive Logic Level — Logic-level compatible

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