2N7002L vs MMBF170LT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2N7002L disebabkan oleh onsemi dan MMBF170LT1 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2N7002L MMBF170LT1
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) 500 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET DMOS
Jenis Pemasangan Surface Mount Surface Mount
Kemasan SOT-23 (SOT-23-3) —
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
Status RoHS [DATA_NEEDED: RoHS status] Compliant (per onsemi product page)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Gambaran Suhu Operasi — -55 °C to +150 °C (TJ max per datasheet)
Kemasan / Case — SOT-23-3 (TO-236)
Kiraan Pin — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga