2N7002L vs MMBF170LT1 比較

詳細並排比較 2N7002L 由 onsemi 與 MMBF170LT1 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2N7002L MMBF170LT1
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Enhancement Mode MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) 500 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V —
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET DMOS
安裝類型 Surface Mount Surface Mount
封裝 SOT-23 (SOT-23-3) —
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi onsemi (ON Semiconductor)
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (per onsemi product page)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
工作溫度範圍 — -55 °C to +150 °C (TJ max per datasheet)
封裝 / 外殼 — SOT-23-3 (TO-236)
腳位數 — 3
AEC-Q101 Qualified — Yes (per datasheet)
Polarity — N-Channel

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