AS4C256M16D3L-12BCN vs K4B4G1646D-BCK0 Comparison
Detailed side-by-side comparison of AS4C256M16D3L-12BCN by Alliance Memory and K4B4G1646D-BCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C256M16D3L-12BCN - 4Gbit DDR3L SDRAM 800MHz | Alliance Memory
AS4C256M16D3L-12BCN ✓ ActiveSpecification Comparison
| Parameter | AS4C256M16D3L-12BCN | K4B4G1646D-BCK0 |
|---|---|---|
| Brand | Alliance Memory | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.00 | $2.30 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Bus Width | 16 bit | — |
| Maximum Clock Frequency | 800 MHz | — |
| Data Rate | 1600 Mbps | 1600 Mbps per pin |
| CAS Latency | 20 ns | 11 (programmable) |
| Supply Voltage | 1.35 V | — |
| Package | 96-FBGA (9x13 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Mounting Style | SMD/SMT | — |
| Operating Temperature Range | 0C to +95C (Tc) | — |
| RoHS | Compliant | Compliant |
| Halogen Free | Yes | — |
| Interface Type | Parallel | — |
| Number of Pins | 96 | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Clock Frequency | — | 800 MHz |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| Burst Length | — | 8, 4 |
| Operating Temperature | — | 0°C to 95°C (Tc) |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |