BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
MPN: BSC009NE2LSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.59 | $2.59 |
| 10 | $2.32 | $23.20 |
| 100 | $1.95 | $195.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.38 | $1,380.00 |
BSC009NE2LSATMA1 Overview
What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. The N-channel variant uses electrons as the primary charge carrier, offering lower on-resistance than equivalent P-channel devices. Power MOSFETs like the BSC009NE2LSATMA1 belong to the discrete semiconductor family and serve as the switching element in synchronous buck converters, motor drives, and battery protection circuits where minimal conduction loss is critical.
Key specifications include 25V drain-source breakdown voltage, 0.9 mOhm maximum R_DS(on) at 10V V_GS, 41A continuous drain current (T_a), 100A continuous / 255A pulsed drain current (T_c), 2.5W power dissipation (T_a) and 96W power dissipation (T_c). The PG-TDSON-8-7 package provides an exposed thermal pad with low thermal resistance for direct PCB heatsinking.
The OptiMOS technology platform uses a trench-gate structure with an epitaxial layer optimized for low R_DS(on) x Q_g figure of merit. This architecture reduces both switching and conduction losses, enabling higher-frequency operation in switched-mode power supplies. The part's low gate charge and small Miller capacitance make it well-suited for high-current DC-DC conversion and OR-ing applications.
Typical applications include battery management systems (BMS) in notebooks, tablets and power tools, OR-ing switches in redundant power architectures, synchronous rectification in 12V bus converters, hot-swap circuits on server backplanes, and motor drive half-bridges in small BLDC fans. Its 0.9 mOhm R_DS(on) keeps conduction losses below 1% even at 30A continuous load, minimizing heatsinking requirements.
When designing with this device, observe the SOA curve for pulsed loads and ensure V_GS(th) is well above any noise on the gate drive. Use Kelvin-source connection when available to avoid gate-bounce induced turn-on. The exposed pad must be soldered to a sufficient copper area for thermal dissipation.
This page synthesizes distributor pricing, parametric alternatives, application guidance, and thermal considerations that complement the manufacturer datasheet.
Drop-in alternatives for BSC009NE2LSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC009NE2LSATMA1 (same form factor and footprint) — differing in Technology, Package, MSL Level, Operating Temperature Range, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC010NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →BSC014NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSC009NE2LS5IATMA1
✅ Drop-In✓ In Stock
$1.02 / Unit
View Datasheet →BSC009NE2LSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 25V |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | 25 V |
| Continuous Drain Current (I_D) at T_a | 41 A |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) |
| Pulsed Drain Current (I_DM) | 255 A |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm |
| Power Dissipation (T_a) | 2.5 W |
| Power Dissipation (T_c) | 96 W |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package / Case | PG-TDSON-8-7 (TDSON-8 FL) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| MSL Level | 1 |
| RoHS Status | Compliant |
BSC009NE2LSATMA1 Pin Configuration
| Pin 1 | S — Source (pin 1 of TDSON-8 FL) |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
| Pin 9 | EP — Exposed Pad (Source / thermal pad, must be soldered to PCB copper pour) |
Safe Operating Area (DC, T_c = 25C)
Typical Applications
BSC009NE2LSATMA1 is suitable for 6 applications: Battery Management System (BMS) Protection, Synchronous Rectification in 12V Buck Converters, OR-ing Switch for Redundant Power, Hot-Swap Controller Output Switch, BLDC Motor Drive Half-Bridge, USB-PD Power Path Switch.
Battery Management System (BMS) Protection
The BSC009NE2LSATMA1's 0.9 mOhm R_DS(on) and 100A T_c current rating make it ideal for the high-side or low-side protection FET in multi-cell Li-ion battery management systems. At 30A continuous discharge, conduction loss is only 0.81W, eliminating the need for an external heatsink in tablet and notebook battery packs. The 25V V_DS rating covers up to 6S Li-ion (25.2V max) with 0.8V headroom. The PG-TDSON-8-7 footprint is the de facto standard for 1-3S protection FETs in portable electronics.
Recommended
Synchronous Rectification in 12V Buck Converters
In 12V-to-low-voltage synchronous buck converters, the BSC009NE2LSATMA1 serves as the low-side FET, where its 0.9 mOhm R_DS(on) minimizes body-diode conduction and resistive losses during the freewheeling phase. With a 10V gate drive the FET operates fully enhanced, and its low Q_g (~50nC typical) keeps gate-drive losses manageable at 500 kHz to 1 MHz switching frequencies. The 25V V_DS provides ample margin above 12V nominal plus transient spikes, making this part a leading choice for 12V-to-1.xV POL converters in servers and telecom bricks.
Recommended
OR-ing Switch for Redundant Power
The BSC009NE2LSATMA1 is well-suited for OR-ing switches in N+1 redundant power architectures where two power sources feed a common load. With 0.9 mOhm R_DS(on), the voltage drop at 30A is only 27 mV, well below the typical 50 mV OR-ing controller threshold. The fast body-diode reverse recovery supports hot-swap insertion scenarios. The PG-TDSON-8-7 footprint accommodates the high-side N-channel OR-ing topology where a charge pump drives the gate above the source voltage.
Recommended
Hot-Swap Controller Output Switch
In -48V telecom and 12V server hot-swap circuits, the BSC009NE2LSATMA1 serves as the inrush-limiting or steady-state pass FET. Its 255A pulsed rating handles the 10x inrush surge during board insertion, while the 0.9 mOhm R_DS(on) keeps steady-state dissipation below 5W at 70A. The 25V V_DS suits 12V rails; for 24V/48V systems consider Infineon BSC-series 40V/60V/80V alternatives in the same TDSON-8 footprint. The exposed thermal pad is essential for sustained hot-swap current.
Recommended
BLDC Motor Drive Half-Bridge
The BSC009NE2LSATMA1 forms the low-side switch in a 3-phase half-bridge driving small BLDC motors in drones, robotics, and e-bike hubs. With 100A continuous T_c and 0.9 mOhm R_DS(on), it handles peak motor currents of 50-80A without saturating thermally. The OptiMOS 25V process is optimized for fast switching at 20-50 kHz PWM frequencies, where the FET's low Q_g reduces gate-driver losses. Use paired gate drivers like the 2EDL series for the high-side and low-side control.
Recommended
USB-PD Power Path Switch
In USB-PD and Type-C power delivery circuits delivering 5V/9V/15V/20V at up to 5A (100W), the BSC009NE2LSATMA1 acts as the load-side switch or reverse-current blocking FET. The 0.9 mOhm R_DS(on) limits voltage drop to 45 mV at 5A, preserving PD voltage tolerance. The 25V V_DS covers the full USB-PD 20V range plus transient overshoot. Its small TDSON-8 footprint is ideal for compact power banks and Type-C chargers where PCB real estate is at a premium.
Recommended
Recommended Products Summary
Engineering reference data for BSC009NE2LSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC010NE2LSIATMA1 | BSC014NE2LSIATMA1 | BSC009NE2LS |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-7 | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same | PG-TDSON-8-7 - same |
| Drain-Source Voltage (V_DS) | 25 V | 25 V | 25 V | 25 V |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | 1.0 mOhm | 1.4 mOhm | 0.9 mOhm |
| Series / Technology | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V (same die, different packaging code) |
| Pin Compatibility | TDSON-8 FL std pinout | Pin-to-pin compatible | Pin-to-pin compatible | Pin-to-pin compatible (identical die) |
Key Differentiators
- Lowest R_DS(on) in TDSON-8 FL at 25V V_DS (vs BSC010NE2LSIATMA1)
- Higher current handling vs higher-R_DS(on) sibling (vs BSC014NE2LSIATMA1)
- OptiMOS 25V trench-gate process optimized for switching (vs BSC009NE2LS (non-TMA1))
Design Notes
Estimated: at 30A continuous drain current with the BSC009NE2LSATMA1's 0.9 mOhm R_DS(on), conduction loss is approximately P = I^2 x R = 0.81W. With a properly designed PCB copper pour (>=1 square inch on top + bottom layers tied via thermal vias), junction temperature rise stays under 30C. Without the exposed pad soldered to copper, thermal resistance rises dramatically and the device cannot sustain >10A continuous load. Always solder the EPAD for production designs.
The PG-TDSON-8-7 footprint requires the exposed pad connected to a thermal copper pour of at least 100 mm^2 total area. Place 8-12 thermal vias (0.3mm drill, 0.5mm pitch) under the EPAD to transfer heat to inner/bottom copper layers. Keep the gate trace short (<10mm) and route it away from the drain switching node to minimize parasitic inductance. Use a Kelvin-source connection if the package variant supports it to avoid gate-bounce-induced turn-on during high di/dt transitions.
For synchronous buck converter layouts using the BSC009NE2LSATMA1 as the low-side FET, minimize the high-side-to-low-side drain-source loop area to reduce switching loss and EMI. Place the input decoupling capacitor on the same copper layer as the FETs, between the high-side drain and low-side source, with the loop area kept under 50 mm^2. Use a gate-drive resistor of 4.7-10 ohm to control the switching edge rate and limit ringing on the gate node.
Do not exceed V_GS = +/-20V absolute maximum. Standard 10V V_GS drive is recommended for full R_DS(on) enhancement; using 4.5V V_GS (logic-level) increases R_DS(on) by 50-100%, negating the device's primary advantage. Verify that peak V_DS transients stay below 25V; use a snubber or TVS clamp if the layout causes ringing that approaches the breakdown voltage. For OR-ing applications, ensure the gate is pulled above the source by a charge pump before the input voltage appears.
Compliance Information
RoHS and lead-free compliant per Infineon product page and DigiKey/Mouser listings. Halogen-free status not explicitly stated in verified data - set to 'unknown'. Not AEC-Q100 qualified (industrial/commercial grade); for automotive BMS choose AEC-Q100-qualified part number variant.
