BSC016N06NSTATMA1 vs IPT008N06NM5LFATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and IPT008N06NM5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC016N06NSTATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | 278 W |
| Power Dissipation (Ta) | 3 W | — |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-HSOF-8 (single, flat-lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | -55 °C to +175 °C (TJ) |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | OptiMOS | — |
| Part Family | — | OptiMOS 5 / Linear FET |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 454 A |
| Pulsed Drain Current | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |