BSC016N06NSTATMA1 vs IPT008N06NM5LFATMA1 Perbandingan
Perbandingan bersamaan detil BSC016N06NSTATMA1 dari Infineon dan IPT008N06NM5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC016N06NSTATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC016N06NSTATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | 278 W |
| Power Dissipation (Ta) | 3 W | — |
| Paket | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-HSOF-8 (single, flat-lead) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C | -55 °C to +175 °C (TJ) |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | OptiMOS | — |
| Part Family | — | OptiMOS 5 / Linear FET |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 454 A |
| Arus Kedip Pengecor | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |