BSC076N04NDATMA1 vs BSC074N15NS5ATMA1 比較
詳細並排比較 BSC076N04NDATMA1 由 Infineon 與 BSC074N15NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC076N04NDATMA1 | BSC074N15NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS™ 5 trench |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 / 外殼 | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 7.4 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| 封裝 | — | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| 工作溫度範圍 | — | [DATA_NEEDED: TJ min/max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Body Diode | — | Integrated |