BSC077N12NS3GATMA1 vs IPB107N20N3GATMA1 Comparison
Detailed side-by-side comparison of BSC077N12NS3GATMA1 by Infineon and IPB107N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveInfineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC077N12NS3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | β |
| Transistor Type | N-Channel MOSFET (enhancement-mode trench) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta | 13.4 A | β |
| Continuous Drain Current (ID) at Tc | 98 A | 88 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Tc | 139 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | 3 (Drain, Source, Gate) + Tab |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | β |
| Product Family | β | OptiMOS 3 |
| Maximum Power Dissipation (Pd) at Tc | β | 300 W |
| On-Resistance RDS(on) at VGS=10V | β | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Operating Temperature Range | β | [DATA_NEEDED: Tj max and operating range] |
| Technology | β | OptiMOS 3 trench MOSFET |