BSC077N12NS3GATMA1 vs IPB107N20N3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC077N12NS3GATMA1 dari Infineon dan IPB107N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC077N12NS3GATMA1 IPB107N20N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) —
Tipe Transistor N-Channel MOSFET (enhancement-mode trench) N-Channel MOSFET
Drain-Source Voltage (VDS) 120 V 200 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A 88 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 3 (Drain, Source, Gate) + Tab
Level MSL 1 —
Status RoHS Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Product Family — OptiMOS 3
Maximum Power Dissipation (Pd) at Tc — 300 W
On-Resistance RDS(on) at VGS=10V — 9.6 milliohm (typical, per third-party listing)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Rentang Suhu Kerja — [DATA_NEEDED: Tj max and operating range]
Technology — OptiMOS 3 trench MOSFET

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