BSC077N12NS3GATMA1 vs IPB107N20N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC077N12NS3GATMA1 disebabkan oleh Infineon dan IPB107N20N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifInfineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC077N12NS3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Jenis Transistor | N-Channel MOSFET (enhancement-mode trench) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 200 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | 88 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | 3 (Drain, Source, Gate) + Tab |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Product Family | — | OptiMOS 3 |
| Maximum Power Dissipation (Pd) at Tc | — | 300 W |
| On-Resistance RDS(on) at VGS=10V | — | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Tj max and operating range] |
| Technology | — | OptiMOS 3 trench MOSFET |