BSC077N12NS3GATMA1 vs IPD30N10S3L34ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC077N12NS3GATMA1 disebabkan oleh Infineon dan IPD30N10S3L34ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC077N12NS3GATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) —
Jenis Transistor N-Channel MOSFET (enhancement-mode trench) N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 120 V 100 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 180 A
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Suhu Hubungan Operasi -55C to +150C -55°C to +175°C
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TO252-3-11 (DPAK-2 / SC-63)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Aras MSL 1 1 (JEDEC J-STD-020, 260°C peak reflow)
Status RoHS Compliant —
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Product Family — OptiMOS-T2
Continuous Drain Current (ID, Tc=25°C) — 30 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

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