BSC077N12NS3GATMA1 vs IPD30N10S3L34ATMA1 Perbandingan

Perbandingan bersamaan detil BSC077N12NS3GATMA1 dari Infineon dan IPD30N10S3L34ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC077N12NS3GATMA1 IPD30N10S3L34ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) —
Tipe Transistor N-Channel MOSFET (enhancement-mode trench) N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) 120 V 100 V
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 180 A
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Suhu Hubung Kerja -55C to +150C -55°C to +175°C
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TO252-3-11 (DPAK-2 / SC-63)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 1 (JEDEC J-STD-020, 260°C peak reflow)
Status RoHS Compliant —
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Product Family — OptiMOS-T2
Continuous Drain Current (ID, Tc=25°C) — 30 A
Power Dissipation (PD, Tc=25°C) — 57 W
Drain-Source On-Resistance (RDS(on) max) — 31 mΩ @ VGS=10 V
Gate-Source Threshold Voltage (VGS(th) typ) — 1.7 V (range 1.0 V to 2.5 V)
Total Gate Charge (Qg typ) — 23 nC
Automotive Qualification — AEC-Q101 qualified
RoHS / REACH — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — 100% Avalanche tested

Spek dan Sumber

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