BSC0993NDATMA1 vs BSC035N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC035N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0993NDATMA1

BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon

BSC0993NDATMA1 βœ“ Active
Infineon
BSC035N04LSGATMA1

BSC035N04LSGATMA1 - 40V 100A 3.5mΞ© OptiMOS 3 N-MOSFET | Infineon

BSC035N04LSGATMA1 βœ“ Active

Specification Comparison

Parameter BSC0993NDATMA1 BSC035N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 30V β€”
Configuration Dual N-Channel (Array) β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Id) @ Ta 17 A β€”
Package PG-TISON-8 PG-TDSON-8-1 (8-pin, exposed drain pad)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET β€”
Channel Mode Enhancement β€”
Operating Temperature Range -55C to +150C (junction) β€”
ESD Protection Yes (integrated) β€”
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Series β€” OptiMOS 3
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Tc=25Β°C β€” 100 A
Continuous Drain Current (ID) at Ta=25Β°C β€” 21 A
RDS(on) Max at VGS=10V β€” 3.5 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.7 V (typ)
Power Dissipation (Pd) at Ta=25Β°C β€” 2.5 W
Power Dissipation (Pd) at Tc=25Β°C β€” 69 W
Operating Junction Temperature β€” -55Β°C to +150Β°C

Datasheets & Resources

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