BSC0993NDATMA1 vs BSC035N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0993NDATMA1 sa pamamagitan ng Infineon at BSC035N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
BSC035N04LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC0993NDATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Packhaging | PG-TISON-8 | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | — |
| Channel Mode | Enhancement | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| ESD Protection | Yes (integrated) | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |