BSC0993NDATMA1 vs BSC035N04LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0993NDATMA1 disebabkan oleh Infineon dan BSC035N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0993NDATMA1 | BSC035N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Kemasan | PG-TISON-8 | PG-TDSON-8-1 (8-pin, exposed drain pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | — |
| Channel Mode | Enhancement | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| ESD Protection | Yes (integrated) | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| RDS(on) Max at VGS=10V | — | 3.5 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Power Dissipation (Pd) at Ta=25°C | — | 2.5 W |
| Power Dissipation (Pd) at Tc=25°C | — | 69 W |
| Suhu Hubungan Operasi | — | -55°C to +150°C |