BSC12DN20NS3GATMA1 vs BSC109N10NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC12DN20NS3GATMA1 by Infineon and BSC109N10NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC12DN20NS3GATMA1
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 β ActiveInfineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC12DN20NS3GATMA1 | BSC109N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.95 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 200V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 63 A |
| Power Dissipation (PD, Tc) | 50 W | 78 W |
| Package | PG-TDSON-8-5 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC |
| Technology | OptiMOS power MOSFET | OptiMOS 3 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Configuration | Single N-channel | β |
| Pin Count | 8 | 8 |
| FET Type | β | N-Channel |
| RDS(on) Max | β | 10.9 mOhm at VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Avalanche Energy Rated | β | Yes |
| Lead-Free | β | Yes |