BSC12DN20NS3GATMA1 vs BSC109N10NS3GATMA1 比較
詳細並排比較 BSC12DN20NS3GATMA1 由 Infineon 與 BSC109N10NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ 啟用中
規格比較
| 參數 | BSC12DN20NS3GATMA1 | BSC109N10NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 200V | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 63 A |
| Power Dissipation (PD, Tc) | 50 W | 78 W |
| 封裝 | PG-TDSON-8-5 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC |
| Technology | OptiMOS power MOSFET | OptiMOS 3 |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel | — |
| 腳位數 | 8 | 8 |
| FET Type | — | N-Channel |
| RDS(on) Max | — | 10.9 mOhm at VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |