BSC12DN20NS3GATMA1 vs BSC109N10NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC12DN20NS3GATMA1 disebabkan oleh Infineon dan BSC109N10NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC12DN20NS3GATMA1 | BSC109N10NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 200V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 63 A |
| Power Dissipation (PD, Tc) | 50 W | 78 W |
| Kemasan | PG-TDSON-8-5 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC |
| Technology | OptiMOS power MOSFET | OptiMOS 3 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel | — |
| Kiraan Pin | 8 | 8 |
| FET Type | — | N-Channel |
| RDS(on) Max | — | 10.9 mOhm at VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |