BSC12DN20NS3GATMA1 vs BSC109N10NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC12DN20NS3GATMA1 sa pamamagitan ng Infineon at BSC109N10NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ NakahandaInfineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC12DN20NS3GATMA1 | BSC109N10NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 200V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 63 A |
| Power Dissipation (PD, Tc) | 50 W | 78 W |
| Packhaging | PG-TDSON-8-5 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold typical] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 26 nC |
| Technology | OptiMOS power MOSFET | OptiMOS 3 |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single N-channel | — |
| Bilang ng Pin | 8 | 8 |
| FET Type | — | N-Channel |
| RDS(on) Max | — | 10.9 mOhm at VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Avalanche Energy Rated | — | Yes |
| Lead-Free | — | Yes |