BSD235CH6327XTSA1 vs BSP88H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD235CH6327XTSA1 disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD235CH6327XTSA1 BSP88H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Single
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS™ low-voltage SIPMOS (planar enhancement mode)
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) —
Aras MSL 1 [DATA_NEEDED: MSL level]
Kiraan Pin 6 —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
Kemasan — PG-SOT223-4 (SOT-223-3)
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Suhu Operasi — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

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