BSD235CH6327XTSA1 vs BSP88H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSD235CH6327XTSA1 dari Infineon dan BSP88H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSD235CH6327XTSA1 BSP88H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Single
Drain-to-Source Voltage (VDS) 20 V —
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS™ low-voltage SIPMOS (planar enhancement mode)
Rentang Suhu Kerja -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) —
Level MSL 1 [DATA_NEEDED: MSL level]
Jumlah Pin 6 —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 240 V
Continuous Drain Current (ID) — 350 mA at Ta=25 C
Power Dissipation (PD) — 1.8 W at Ta=25 C
Paket — PG-SOT223-4 (SOT-223-3)
On-State Resistance (RDS(on)) — 6 ohm typical at VGS=10 V
Suhu Kerja — -55 C to +150 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

Spek dan Sumber

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