BSP129H6327XTSA1 vs BSP135H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP129H6327XTSA1 by Infineon and BSP135H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP129H6327XTSA1 BSP135H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.30 $0.43
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA β€”
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) 45 ohm at VGS = 0 V
Power Dissipation (PD) at TA=25C 1.8 W β€”
Package PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-3 plus tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +150 C (junction) β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] β€”
dv/dt Ruggedness Yes (rated) β€”
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] 1
Process Technology SIPMOS (vertical DMOS) β€”
Drain Terminal Tab (pin 4) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSP135H6327XTSA1
Continuous Drain Current (ID) β€” 120 mA
Power Dissipation (PD) β€” 1.8 W
On-Resistance RDS(on) β€” 25 ohm (typical, per digchip)
Operating Mode β€” Normally ON (depletion)
Technology β€” SIPMOS (planar DMOS)
Operating Temperature Range β€” -55C to +150C (junction, typical)

Datasheets & Resources

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