BSP129H6327XTSA1 vs BSP135H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP129H6327XTSA1 sa pamamagitan ng Infineon at BSP135H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP129H6327XTSA1 BSP135H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) 45 ohm at VGS = 0 V
Power Dissipation (PD) at TA=25C 1.8 W —
Packhaging PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-3 plus tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] 1
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
Hanay ng Temperature na Operasyon — -55C to +150C (junction, typical)

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