BSP129H6327XTSA1 vs BSP135H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP129H6327XTSA1 disebabkan oleh Infineon dan BSP135H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP129H6327XTSA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) 45 ohm at VGS = 0 V
Power Dissipation (PD) at TA=25C 1.8 W —
Kemasan PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-3 plus tab)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
Gambaran Suhu Operasi — -55C to +150C (junction, typical)

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