BSP129H6327XTSA1 vs BSP135H6327XTSA1 比較

詳細並排比較 BSP129H6327XTSA1 由 Infineon 與 BSP135H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 ✓ 啟用中

規格比較

參數 BSP129H6327XTSA1 BSP135H6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) 45 ohm at VGS = 0 V
Power Dissipation (PD) at TA=25C 1.8 W —
封裝 PG-SOT223-4 (SOT-223, 3+Tab) PG-SOT223-4 (SOT-223-3 plus tab)
安裝類型 Surface Mount Surface Mount
工作溫度 -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] 1
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
工作溫度範圍 — -55C to +150C (junction, typical)

資料表與資源

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